Stress and texture in HIPIMS TiN thin films

Titanium nitride (TiN) films in the thickness range of 0.013 µm to 0.3 µm were grown by high power impulse magnetron sputtering (HIPIMS) on silicon substrates in two deposition modes: a) the substrate was grounded and b) − 125 V bias was applied to the substrate. On the films we performed microstructure-, film texture- and film stress-analysis. The films deposited under − 125 V bias experienced a more energetic ion bombardment than the films deposited on grounded substrates. This difference in ion bombardment energy is reflected in the different microstructure. In contrast to previous results for TiN films grown by conventional reactive magnetron sputtering, we observe no major film stress gradient for increasing film thicknesses. We explain this observation from the absence of a 200-to-111 texture crossover during film growth.A moderate ion bombardment leads to TiN films with (111) texture, while an intense ion bombardment leads to films with (001) texture (Greene et al.; Appl. Phys. Lett. 67 (20) 2928–2930 (1995)). At the same time (001) oriented grains are much more susceptible to compressive stress generation by ion bombardment than (111) oriented grains.