Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1672113 | Thin Solid Films | 2008 | 4 Pages |
Abstract
We report on the fabrication and electrical characteristics of thin film transistors (TFTs) based on low Ga-doped zinc oxide (GZO). Low Ga-doped (1Â wt.%) ZnO thin films deposited as an active channel by radio frequency magnetron sputtering at room temperature exhibit a high transmittance (>Â 80%). The devices show a mobility of ~Â 5.7Â cm2/Vs at low operation voltage of <Â 5Â V and a low turn-on voltage of ~Â 0.5Â V with a subthreshold swing of ~Â 85Â mV/decade. The TFT device performance is significantly affected by vacuum-level and annealing treatment, which is attributed to the chemisorption/desorption of oxygen from the surface of active channel. Low doped GZO is a type of TFT channel material that has potential for high performance, multi-functionality and easy-process.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ved Prakash Verma, Do-Hyun Kim, Hoonha Jeon, Minhyon Jeon, Wonbong Choi,