| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1672183 | Thin Solid Films | 2009 | 5 Pages |
Abstract
We have investigated self-assembled monolayer (SAM) treatment on SiO2 gate insulator of poly(3-hexylthiophene) (P3HT) thin-film transistor (TFT), and demonstrated a correlation between mobility and surface free energy of the insulator. The device with lower surface free energy shows higher mobility. The docosyltrichlorosilane (DCTS)-treated device exhibits the best performance among the various SAM-treated devices examined. Field-effect mobility, on/off ratio and threshold voltage of the DCTS-treated P3HT TFT were 0.015 cm2/Vs, >105 and −14 V, respectively.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yoshinori Horii, Mitsuhiro Ikawa, Koichi Sakaguchi, Masayuki Chikamatsu, Yuji Yoshida, Reiko Azumi, Hiroshi Mogi, Masahiko Kitagawa, Hisatoshi Konishi, Kiyoshi Yase,