| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1672368 | Thin Solid Films | 2008 | 5 Pages |
Abstract
Cu–In–Ga (CIG) layers of graded composition have been grown by one-step electrodeposition from thiocyanate complex electrolytes. The Ga-content is adjusted from two to 30 at.% by changing stirring rate, deposition time and solution composition. The as prepared CIG precursors are selenizated at 500 °C in a two-temperature zone furnace at different Se-vapour pressures. The influence of the Se-vapour pressure on morphology and photoluminescence properties of Cu(In, Ga)Se2 films are discussed.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J. Kois, M. Ganchev, M. Kaelin, S. Bereznev, E. Tzvetkova, O. Volobujeva, N. Stratieva, A.N. Tiwari,