Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1672396 | Thin Solid Films | 2008 | 5 Pages |
Abstract
Cerium oxide was grown epitaxially on a Cu(111) substrate at 520Â K in an oxygen atmosphere and resulted in a high quality CeO2(111) overlayers. The continuous single crystalline thin films were characterized by low energy electron diffraction, X-ray photoelectron spectroscopy of the Ce 3d core levels and resonant photoelectron spectroscopy of the valence band. The Ce oxide on Cu(111) grew initially in the form of islands giving a sharp (1.5Â ÃÂ 1.5) hexagonal diffraction pattern of the CeO2(111) structure. It covered the substrate surface completely after deposition of a 2.5-monolayer thick overlayer. Ce 3d spectra and resonant enhancement of the valence band emission show that Ce is present in the Ce4+ oxidation state.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
F. Å utara, M. Cabala, L. SedláÄek, T. Skála, M. Å koda, V. MatolÃn, K.C. Prince, V. Cháb,