Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1672407 | Thin Solid Films | 2008 | 8 Pages |
Abstract
A synthetic avenue for the formation of yttrium oxide thin films on Si native oxide surfaces is demonstrated by the reaction of Tris(2,2,6,6-tetramethyl-3,5-heptanedionato) yttrium(III) with inorganic (H2O2) and organic (tert-butyl and di-tert-amyl) peroxides in supercritical carbon dioxide. The reactions are carried out in a hot wall reactor at temperatures below 130 °C and pressures ranging from 13.10 to 22.75 MPa. Spectroscopic Ellipsometry verifies thin film formation and X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements confirm formation of yttrium oxide films and the presence of carbonate and hydroxide species which are removed after high temperature anneals.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Theodosia Gougousi, Zhiying Chen,