| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1672488 | Thin Solid Films | 2009 | 6 Pages |
To develop high-performance piezoelectric films on conventional Pt(111)/Ti/SiO2/Si(100) substrates, sol–gel-derived highly [100]-textured Nb-doped Pb(ZrxTi1 − x)O3 (PNZT) thin films with different Zr/Ti ratios ranging from 20/80 to 80/20 were prepared and characterized. The phase structure, ferroelectric and piezoelectric properties of the PZNT films were investigated as a function of Zr/Ti ratios, and it was confirmed that there was distinct phase transition of the PNZT system from tetragonal to rhombohedral when the Zr/Ti ratio varied across the morphotropic phase boundary (MPB). The Nb-doped PZT films showed enhanced remanent polarization but reduced coercive field, whose best values reached 75 μC/cm2 and 82 kV/cm, respectively at the composition close to MPB. In addition, the [100]-textured PNZT film at MPB also shows a high piezoelectric coefficient up to 161 pm/V. All these properties are superior to those for undoped PZT films.
