Article ID Journal Published Year Pages File Type
1672510 Thin Solid Films 2009 5 Pages PDF
Abstract

Clean oriented Al2O3 thin film with a dominant Al2O3 <1 1 3> plane was deposited on Si <1 0 0> substrate at 550 °C, by single-source chemical vapor deposition (CVD) using aluminium(III) diisopropylcarbamate, Al2(O2CNiPr2)6. This process represents a substantial reduction in typical CVD film growth temperatures which are typically > 1000 °C. Through the studies of thermal stability of this precursor, we propose a specific β-elimination decomposition pathway to account for the low temperature of the precursor decomposition at the substrate, and for the lack of carbon impurity byproducts in the resulting alumina films that are characterized using X-ray photoelectron spectroscopy and depth profiling.

Keywords
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
, , , ,