| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1672534 | Thin Solid Films | 2009 | 4 Pages |
Abstract
A low-temperature (~ 350 °C) solution-processed CuInSSe photovoltaic cell is reported. The CuInSSe film was solution-deposited via spin-coating from a precursor solution consisting of metal chalcogenides (Cu2S and In2Se3) dissolved in hydrazine (N2H4). X-ray diffraction data indicated a full conversion from the hydrazine precursor to CuInSxSe2−x structure at 350 °C with an average crystallite size of approximately 45 nm. Bandgap tuning of the CuInSxSe2−x was achieved by varying the excess amount of sulfur in the precursor solution. Based on the (220) reflection of the XRD pattern, the bandgap of CuInSxSe2−x ranged from 1.00 to 1.14 eV. Standard testing conditions at 1-sun intensity resulted in a power conversion efficiency of 7.43%.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
William W. Hou, Brion Bob, Sheng-han Li, Yang Yang,