Article ID Journal Published Year Pages File Type
1672558 Thin Solid Films 2009 4 Pages PDF
Abstract

The photoluminescent (PL) and electroluminescent (EL) characteristics in the thin films of various Bi-activated niobate-based oxide phosphors have been investigated. LaNbO4:Bi, GdNbO4:Bi and YNbO4:Bi phosphor thin films were prepared on thick BaTiO3 ceramic sheet substrates by either a conventional or a combinatorial radio frequency magnetron sputtering deposition followed by postannealing at a high temperature. Blue PL emissions were observed from Bi-activated niobate-based oxide phosphor thin films postannealed at a temperature above approximately 800 °C in air or a pure Ar gas atmosphere. The excitation spectra of the blue PL emissions as well as the blue emission spectra observed from LaNbO4:Bi, GdNbO4:Bi and YNbO4:Bi phosphor thin films exhibited an increasing red-shift in that order. In addition, blue, whitish blue-green or blue-green emissions were observed from thin-film electroluminescent devices fabricated with a LaNbO4:Bi, a GdNbO4:Bi or a YNbO4:Bi thin-film emitting layer, respectively. However, the EL emission spectra observed from these TFEL devices exhibited a red-shift relative to the PL emission spectra observed from the respective phosphor thin films. The resulting difference between the observed PL and EL emission spectra may be explained by the 6 s2–6 s6p transitions in Bi3+ ions. In particular, the long-wavelength bands observed in the EL emissions may be attributable to the selection rule resolved by a high electric field applied to the phosphor thin films.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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