Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1672594 | Thin Solid Films | 2008 | 10 Pages |
Abstract
In narrow-gap semiconductors, non-radiative Auger recombination losses (via conduction, heavy-hole, spin split-off hole, heavy-hole processes) are sensitive to how the band gap energy, E0, compares to the spin-orbit splitting, Î0. However, narrow-gap band structures have often not been very well characterised. We report on the mid-infrared photo-modulated reflectance of E0 and E0 + Î0 transitions in high-quality, InAs-rich InAsSb and GaInAsPSb samples as functions of both temperature (T = 10-300 K) and antimony content â¤Â 22.5%, for wavelengths up to ~ 4.75 μm. The measured T-dependence of E0 is generally consistent with that accepted in the literature and we confirm that Î0 is T-independent. As a function of Sb fraction, E0 is consistent with the positive bowing parameter of + 670 meV quoted in the literature. However, Î0 does not exhibit the currently accepted positive bowing parameter of + 1170 meV: rather, a best fit to our data tentatively suggests a negative bowing of ~ â 165 meV. Due to the importance of Î0 in predicting and interpreting the performance of InAsSb-based devices, this result is expected to have a significant impact.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S.A. Cripps, T.J.C. Hosea, A. Krier, V. Smirnov, P.J. Batty, Q.D. Zhuang, H.H. Lin, Po-Wei Liu, G. Tsai,