Ce1−xNdxO2−δ/Si thin films obtained by pulsed laser deposition: Microstructure and conduction properties

Substituted Ce1−xNdxO2−δ cerium dioxide thin films are obtained by pulsed laser deposition technique. The films are deposited for various deposition times and at.% Nd, on [100] Si substrates, covered by a thin native SiO2 layer. The evolution of the cell parameters with Nd content shows that a solid solution is formed, up to x = 0.27. The thin films are homogenous in composition at a nanometer scale. The morphology of the grains does not change significantly with Nd content. The microstructure is columnar, with a preferential [100] growth direction. The width of the grains varies from 20 to 30 nm. The conductivities of the thin films are determined from impedance spectroscopy analyses, in the temperature range 200 °C to 600 °C. The experimental data are explained in the frame of the space charge layer model.