Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1672746 | Thin Solid Films | 2008 | 6 Pages |
Abstract
It was previously shown that the effective contact potential difference (φMS) in Al–SiO2–Si metal-oxide-semiconductor structures has a “dome-like” shape of distribution over the Al-gate area. In this paper we show that this shape is due to the distribution of the barrier height at the Al–SiO2 interface and that the characteristic shape of φMS(x,y) distribution is reflected in a similar shape of the flat-band voltage VFB(x,y)distribution over the gate area. As opposed to the Al–SiO2–Si system, we find that in poly–Si–SiO2–Si structures both the φMS(x,y) and the VFB(x,y) distributions are practically uniform.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
H.M. Przewlocki, A. Kudla, K. Piskorski, D. Brzezinska,