| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1672805 | Thin Solid Films | 2009 | 6 Pages |
To increase the electromigration resistance of copper interconnects copper alloy systems are of interest. In the present paper electrical properties of Cu(Ag) films will be discussed with respect to heat treatment and in comparison to copper and other alloy systems. The investigations show that the electrical resistivity of Cu(Ag) films is very low in comparison to other copper alloy systems. Up to an alloy content of about 2 at.% Ag the International Technology Roadmap for Semiconductors criterion of 2.2 μΩcm (scattering by geometrical constraints neglected) can be fulfilled after heat treatment. The various components of the electrical resistivity will be discussed in detail. The investigations show that grain growth and the redistribution of silver and impurities dominate the electrical resistivity evolution.
