Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1672858 | Thin Solid Films | 2009 | 4 Pages |
Abstract
Co/AlOx/Co with AlOx barriers of various oxidation states were fabricated and investigated using inelastic electron tunneling (IET) spectroscopy and X-ray photoelectron spectroscopy (XPS). XPS revealed that AlOx oxidized for 8 h contained an inhomogeneous distribution of metallic Al, whereas AlOx oxidized for 24 h contained a homogeneous distribution. The inhomogeneous and homogeneous distributions of metallic Al corresponded to asymmetric and symmetric IET spectra, respectively. These junctions showed peaks at ± 0.03 V. AlOx oxidized for 168 h contained no metallic Al, and this junction had no peaks, suggesting that peaks at ± 0.03 V originate from metallic Al.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K. Horikiri, M. Morizumi, K. Shiiki,