| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1672959 | Thin Solid Films | 2007 | 5 Pages |
The influence of annealing effects in CuInSe2 ternary films prepared by successive ionic layer absorption and reaction method has been investigated. The films have firstly been deposited on glass substrates at room temperature and then heat-treated under Ar atmosphere at various annealing temperatures. CuInSe2 films were characterized using X-ray diffraction (XRD), scanning electron microscopy, X-ray photoelectron spectra, optical absorption spectrum and Hall system. XRD results showed that the proper post-annealing process can lead to a complete formation of chalcopyrite structure CuInSe2 with high degree of preferred orientation towards (112) reflection. After annealing process, the composition of annealed films was close to the standard stoichiometry and O, Cl impurities decreased. The direct band gap increased from 0.94 to 0.98 eV and resistivity showed a big decrease with the increase of annealing temperature.
