Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673018 | Thin Solid Films | 2007 | 5 Pages |
Abstract
A simple doping method to fabricate a very thin channel body of the p-type fin field-effect-transistor (FinFET) with a 20-nm gate length by solid-phase-diffusion process is presented. Using the poly-boron-films (PBF) as a diffusion source of boron and the rapid thermal annealing, the p-type source/drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of boron-doped regions were investigated by using the p+–n junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20–100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Won-Ju Cho, Sang-Mo Koo,