Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673065 | Thin Solid Films | 2008 | 4 Pages |
Abstract
GaN etching damage by capacitively-coupled RF Ar plasma exposure is significantly dependent on gas pressure and exposure time. At a low gas pressure (10 mTorr), the N/Ga ratio decreases by the physical etching effect with increasing exposure time, while the GaN surface morphology is smooth. At a high gas pressure (50 mTorr), there are other effects such as UV radiation, by which the GaN surface morphology becomes rough as the exposure time increases from ∼ 60 min.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Retsuo Kawakami, Takeshi Inaoka, Shingo Minamoto, Yasuyuki Kikuhara,