Characterization of electron irradiated GaN n+–p diode

Electron-beam irradiated GaN n+–p diodes were characterized by deep level transient spectroscopy (DLTS) and optical responsivity measurements. The GaN n+–p diode structures were grown by metal organic chemical vapor deposition technique, and the electron irradiation was done by the energies of 1 MeV and 2 MeV with dose of 1 × 1016 cm− 2. In DLTS measurement, the defect states of Ec − 0.36 eV and Ec − 0.44 eV in the electron irradiated diodes appeared newly. The optical responsivity of GaN n+–p diode was characterized in ultra-violet region, and then the maximum optical responsivity at 350 nm was decreased after electron-beam irradiation.