Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673068 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Challenges, new and old, are outlined for etching at the 45 nm technology node and below. The over-riding challenges pertain to improving selectivity over a wider range of materials and topographies and predicting pattern density behavior to reduce cost in mask design.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Richard A. Gottscho, K. Nojiri, J. LaCara,