Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673071 | Thin Solid Films | 2008 | 5 Pages |
Abstract
Etch characteristics of magnetic tunnel junction (MTJ) stack masked with TiN films were investigated using an inductively coupled plasma reactive ion etcher in Cl2/Ar and BCl3/Ar gases for magnetic random access memory. The effect of etch gas on the etch profile of MTJ stacks was examined. As Cl2 and BCl3 concentrations increased, the etch slope of etched MTJ stack became slanted and the dimensional shrinkage was observed. A high degree of anisotropic etching of MTJ stacks was achieved using Cl2/Ar gas at the optimized etch conditions.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Su Ryun Min, Han Na Cho, Kee Won Kim, Young Jin Cho, Sung-Hoon Choa, Chee Won Chung,