| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1673080 | Thin Solid Films | 2008 | 4 Pages |
Abstract
With application to underlayer of strained Si film in mind, polycrystalline SiGe films were deposited by plasma chemical vapor deposition (PCVD) using a high-density surface wave-excited plasma in SiH4/GeH4/H2 gas. The atomic ratio of Si/Ge in the film was controlled by adjusting the gas flow rate ratio of SiH4/GeH4. The lattice spacing of the film was also controlled by the gas flow rate ratio. Polycrystalline SiGe film with large grain size of ∼ 200 nm and high crystallinity was successfully deposited by surface wave-excited plasma.
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Authors
Y. Takanishi, T. Okayasu, H. Toyoda, H. Sugai,