Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673081 | Thin Solid Films | 2008 | 6 Pages |
Abstract
A mechanism for the modification of porous ultra low-k (ULK) and extreme ultra low-k (EULK) SiCOH-based materials is proposed. This is achieved by correlating film damage on a patterned structure measured by angular resolved x-ray photoelectron spectroscopy (ARXPS) with corresponding changes in reactive species radical density and ion current in the plasma measured by optical emission spectroscopy (OES), rare gas actinometry, and modeling. Line-to-line electrical leakage and capacitance data of nested line structures exposed to downstream ash plasmas suggest that other etching steps during back-end-of-the-line (BEOL) dual damascene processing are also critical for the overall modification induced to these materials.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
N.C.M. Fuller, M.A. Worsley, L. Tai, S. Bent, C. Labelle, J. Arnold, T. Dalton,