| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1673371 | Thin Solid Films | 2008 | 6 Pages |
Abstract
High power pulsed magnetron sputtering has been used for depositing Al-doped ZnO films from metallic targets in a reactive process. A new type of process control has been developed in order to stabilize the discharge in the transition region. It has been shown that the process can be stabilized for all operating points at high peak power densities. The discharge characteristics like peak power density and plasma impedance have been analyzed. Films have been deposited at room temperature and 200 °C and resistivities below 400 μΩcm have been obtained.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
F. Ruske, A. Pflug, V. Sittinger, W. Werner, B. Szyszka, D.J. Christie,