Electrical properties of NiO films obtained by high-temperature oxidation of nickel

Nickel oxide thin films are formed by high-temperature oxidation of nickel foils at 973 K, and are characterized using X-ray diffraction and scanning electron microscopy indicating the formation of a single NiO phase whose thickness grows following a parabolic law. The electrical properties of the formed films are examined by impedance spectroscopy at room temperature; and by measuring direct current (DC) and alternating current (AC) conductivities and dielectric properties at different temperatures. At room temperature, the conductivity is about 4 orders of magnitude higher than that of NiO single crystals. Below 200 K, DC conductivity displays a slight increase with increasing temperature indicating conduction by thermal activation hopping of small polarons. Above 250 K, large polaron conduction associated with holes in the 2p band of O2− with activation energy of about 0.4 eV is observed. Frequency as well as temperature dependencies of the AC conductivity and dielectric constant exhibit trends usually observed in carrier dominated dielectrics.