| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1673462 | Thin Solid Films | 2008 | 5 Pages |
Abstract
ZnO thin films were deposited on (0001) Al2O3 substrates depending on oxygen partial pressure by pulsed laser deposition. Optical properties of ZnO were investigated by photoluminescence (PL). The relationship between PL and electron concentration has been investigated. Origin of the dominant ultraviolet (UV) emission in ZnO thin film measured at room temperature was identified as a free electron-neutral-acceptor transition (eA0) through temperature dependence of PL measurement. The UV emission intensity at room temperature is related to variation of electron concentration because a free-electron-neutral-acceptor transition (eA0) as origin of UV emission at room temperature is related to impurity concentration of ZnO.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hong Seong Kang, Gun Hee Kim, Sung Hoon Lim, Hyun Woo Chang, Jong Hoon Kim, Sang Yeol Lee,