Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673481 | Thin Solid Films | 2008 | 7 Pages |
Abstract
The correlations between morphological features and field-effect properties of poly(alkoxyphenylene-thiophene) thin Langmuir-Schäfer film deposited on differently terminated gate dielectric surfaces, namely bare and methyl functionalized thermal silicon dioxide (t-SiO2), have been systematically studied. The film morphology has been investigated at different film thickness by Scanning Force Microscopy. Films thicker than a few layers show comparable morphology on both dielectric surfaces while differences are seen for the ultra-thin polymer deposit in close proximity to the substrate. Such deposit is notably more heterogeneous on bare t-SiO2, while a more compact and uniform nanogranular structure is observed on the silylated t-SiO2. As to the field-effect properties, the methyl-terminated gate dielectric surface leads to a two order of magnitude mobility enhancement along with a field-effect thickness independent conductance.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Cristina Tanese, Bruno Pignataro, Gianluca M. Farinola, Donato Colangiuli, Ludovico Valli, Livia Giotta, Sabrina Conoci, Francesco Marinelli, Eliana Ieva, Francesco Babudri, Francesco Naso, Luigia Sabbatini, P. Giorgio Zambonin, Luisa Torsi,