| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1673613 | Thin Solid Films | 2007 | 4 Pages |
Abstract
In this study, a nonvolatile memory device with NiSi2 nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated. A significant memory effect is observed during the characterization of the electrical properties. When a low operating voltage, 4 V, is applied, a significant threshold voltage shift of 1.3 V, is observed. The processing of this structure is compatible with the current manufacturing technology of semiconductor industry.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
F.M. Yang, T.C. Chang, Po-Tsun Liu, Y.H Yeh, Y.C. Yu, J.Y. Lin, S.M. Sze, J.C. Lou,