Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673634 | Thin Solid Films | 2007 | 5 Pages |
Abstract
For effectively reducing the off-state signal loss resulted from the a-Si:H TFTs photo leakage current, the a-Si:H TFTs with the use of ITO as source–drain metal have been fabricated for this study. Several TFT structures have been fabricated to examine this characteristic. A remarkable reduction in photo leakage current has been observed under the 3300 cd/m2 CCFL backlight illumination. The source–drain barrier height engineering has been proposed for these results. According to the energy band diagram, the barrier height for hole is estimated about 3 eV. As a result, the photo-generation holes blocked in the source–drain barrier height could effectively reduce the photo leakage current in off-state.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M.C. Wang, T.C. Chang, P.T. Liu, Y.Y. Li, F.S. Huang, Y.J. Mei, J.R. Chen,