Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673772 | Thin Solid Films | 2008 | 4 Pages |
Abstract
We present recent progress on hot-wire deposited thin film solar cells and applications of silicon nitride. The cell efficiency reached for μc-Si:H n-i-p solar cells on textured Ag/ZnO presently is 8.5%, in line with the state-of-the-art level for μc-Si:H n-i-p's for any method of deposition. Such cells, used in triple junction cells together with hot-wire deposited proto-Si:H and plasma-deposited SiGe:H, have reached 10.5% efficiency. The single junction μc-Si:H n-i-p cell is entirely stable under prolonged light soaking. The triple junction cell, including protocrystalline i-layers, is within 3% stable, due to the limited thicknesses of the two top cells. The application of SiNx:H at a deposition rate of 3 nm/s to polycrystalline Si wafer solar cells has led to cells with 15.7% efficiency. We have also achieved record high deposition rates of 7.3 nm/s for transparent and dense SiNx;H. Hot-wire SiNx:H is likely to be the first large commercial application of the Hot Wire CVD (Cat-CVD) technology.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
R.E.I. Schropp, R.H. Franken, H.D. Goldbach, Z.S. Houweling, H. Li, J.K. Rath, J.W.A. Schüttauf, R.L. Stolk, V. Verlaan, C.H.M. van der Werf,