Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673790 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Electronic transport properties of hydrogenated microcrystalline silicon films prepared by hot-wire CVD have been discussed. Near room temperature, the photo-transport occurs by thermionic emission of electrons over potential barriers between grain boundaries. The potential barrier height, which dominates the carrier mobility, decreases with increasing illumination intensity. The mobility-lifetime product (10â 7-10â 8 cm2 Vâ 1) at 300 K obtained experimentally is comparable with those obtained in films prepared by plasma enhanced CVD.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Kenji Murata, Koichi Shimakawa, Yuta Takai, Takashi Itoh,