| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1673795 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Oxygen-impurity boron-doped hydrogenated microcrystalline silicon (p-μc-Si:Ox:H) films have been deposited using catalytic chemical vapor deposition (Cat-CVD). Pure silane (SiH4), hydrogen (H2), oxygen (O2), and diluted diborane (B2H6) gases were used. The tungsten catalyst temperature (Tfil) was varied from 1900 to 2100 °C and films were deposited on glass substrates at temperatures of 100 to 300 °C. Different catalyst-to-substrate distances were employed and single- or double-coiled filaments were used. In addition to p-μc-Si:Ox:H deposition, we have also deposited conventional p-type microcrystalline silicon (p-μc-Si:H) in order to compare their electrical and optical properties to p-μc-Si:Ox:H.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yasuhiro Matsumoto, Victor Sánchez R., Alejandro Avila G.,