| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1673797 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Polycrystalline silicon (poly-Si) films thicker than 1.5 μm, consisting of dense small grains called nano-grain poly-Si (ngp-Si), are formed by flash lamp annealing (FLA) of amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) method. Crystallinity of the ngp-Si films can be controlled by changing lamp irradiance. Secondary ion mass spectroscopy (SIMS) profiles of dopants in the ngp-Si films after FLA shows no serious diffusion. A minority carrier lifetime of over 5 μs is observed from these ngp-Si films after defect termination process using high pressure water vapor annealing (HPWVA), showing possibility of application for high-efficient thin film solar cells.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Keisuke Ohdaira, Yuki Abe, Makoto Fukuda, Shogo Nishizaki, Noritaka Usami, Kazuo Nakajima, Takeshi Karasawa, Tetsuya Torikai, Hideki Matsumura,