| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1673800 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Silicon oxynitride (SiOxNy) films have been formed by adding proper amount of oxygen gas to usual forming condition of silicon nitride (SiNx) films in catalytic chemical vapor deposition (Cat-CVD) method. The composition and refractive index of the film can be systematically controlled by changing oxygen flow rate. Organic light-emitting diodes (OLEDs) covered with SiNx/SiOxNy stacked films have been completely protected from damage due to oxygen and moisture and their initial emission intensity is maintained over 1000 hours under 60 °C and 90% RH, which is equivalent to 50 000 hours in normal temperature and humidity conditions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yohei Ogawa, Keisuke Ohdaira, Takuya Oyaidu, Hideki Matsumura,