Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673806 | Thin Solid Films | 2008 | 4 Pages |
Abstract
We investigated an influence of gas pressure on low-temperature preparation of nanocrystalline cubic silicon carbide (nc-3C-SiC) films by hot-wire chemical vapour deposition (HW-CVD) using SiH4/CH4/H2 system. X-ray diffraction (XRD) and Fourier transform infrared (FT-IR) spectra revealed that the films prepared below 1.5Â Torr were Si-nanocrystallite-embedded hydrogenated amorphous SiC. On the other hand, nc-3C-SiC films were successfully prepared at gas pressure above 2Â Torr. The high gas pressure plays two important roles in low-temperature preparation of nc-3C-SiC films: (1) leading to sufficient decomposition of CH4 molecules through a gas phase reaction and an increase in the incorporation of carbon atoms into film and (2) promoting a creation of H radicals on the heated filament, allowing the sufficient coverage of growing film surface and a selective etching of amorphous network structure and/or crystalline-Si phase. It was found that total gas pressure is a key parameter for low-temperature preparation of nc-3C-SiC films.
Related Topics
Physical Sciences and Engineering
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Authors
Yusuke Komura, Akimori Tabata, Tomoki Narita, Akihiro Kondo,