Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673829 | Thin Solid Films | 2008 | 5 Pages |
Abstract
Microcrystalline silicon (μc-Si:H) solar cells with i-layers deposited by hot wire chemical vapor deposition (HWCVD) exhibit higher open circuit voltage and fill factor than the cells with i-layers deposited by plasma enhanced (PE)-CVD. Inserting an intrinsic μc-Si:H p/i buffer layer prepared by HWCVD into PECVD cells nearly eliminates these differences. The influence of buffer layer properties on the performance of μc-Si:H solar cells was investigated. Using such buffer layers allows to apply high deposition rate processes for the μc-Si:H i-layer material yielding a high efficiency of 10.3% for a single junction μc-Si:H solar cell.
Related Topics
Physical Sciences and Engineering
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Authors
F. Finger, Y. Mai, S. Klein, R. Carius,