Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673831 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Triple junction n-i-p cells were deposited using proto-Si:H, plasma-deposited proto-SiGe:H and μc-Si:H as top, middle and bottom cell absorber layers. With Ag/ZnO TBR's from our lab and United Solar Ovonic LLC, respective initial efficiencies of 10.45% (2.030 V, 7.8 mA/cm2, 0.66) and 10.50% (2.113 V, 7.4 mA/cm2, 0.67) were achieved.
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Authors
R.L. Stolk, H. Li, R.H. Franken, J.W.A. Schüttauf, C.H.M. van der Werf, J.K. Rath, R.E.I. Schropp,