Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673833 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back contacts to textured p-type silicon wafers. This is the best reported p-wafer heterojunction solar cell by any technique. We have also dramatically improved the quality of HWCVD silicon epitaxy and recently achieved 11 μm of epitaxial growth at a rate of 110 nm/min.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Howard M. Branz, Charles W. Teplin, David L. Young, Matthew R. Page, Eugene Iwaniczko, Lorenzo Roybal, Russell Bauer, A. Harv Mahan, Yueqin Xu, Pauls Stradins, Tihu Wang, Qi Wang,