| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1673841 | Thin Solid Films | 2008 | 6 Pages |
Abstract
The ULSI technology has been following Moore's law into the sub-100Â nm era, although several challenging technical issues must be resolved. This paper describes possible application of Cat-CVD for ULSI technology beyond the 45Â nm node. Especially, Cat-CVD SiN film for a transistor gate sidewall and/or a pre-metallic liner layer, and removal of photo resist (ash) by Cat-induced hydrogen atoms in the interconnect structure with an extreme low-k material are mainly discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yoichi Akasaka,