Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673849 | Thin Solid Films | 2008 | 4 Pages |
Abstract
The effects of nitrogen ion bombardment on TiO2 films prepared by the Cat-CVD method have been studied to improve the optical and electrical properties of the material for use in Si thin film solar cells. The refractive index n and the dark conductivity of the TiO2 film increased with irradiation time. The refractive index n of the TiO2 film was changed from 2.1 to 2.4 and the electrical conductivity was improved from 3.4 × 10− 2 to 1.2 × 10− 1 S/cm by the irradiation. These results are due to the formation of Ti–N bonds and oxygen vacancies in the film.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Tomoki Narita, Tamio Iida, Shunsuke Ogawa, Kouichi Mizuno, Jisung So, Akihiro Kondo, Norimitsu Yoshida, Takashi Itoh, Shuichi Nonomura, Yasuhito Tanaka,