Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673884 | Thin Solid Films | 2008 | 4 Pages |
Abstract
The development of single-crystalline silicon (Si) on a glass substrate is an important challenge for its application to a system on glass and highly effective solar cell. This paper proposes an approach to form selective single-crystalline Si on non-alkaline glass using self-aligned heat reservoirs and continuous-wave green-laser lateral crystallization. Single-crystalline Si is selectively formed in a predetermined region on a non-alkaline glass substrate with dimensions of 7 Ã 10 μm2.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Akito Hara,