Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1673941 | Thin Solid Films | 2008 | 5 Pages |
Abstract
HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al2O3 buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of ~ 1.20 cm2/V∙s and an on/off current ratio of ~ 1 × 103.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Dong-Won Kim, Jaewon Jang, Hyunsuk Kim, Kyoungah Cho, Sangsig Kim,