| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1673969 | Thin Solid Films | 2008 | 4 Pages |
Abstract
The reactive-ion etching of Sn-doped Ge2Sb2Te5 (GST) films with different Sn concentration in CHF3/O2 plasma was studied. By changing the gas mixture ratio and radio-frequency (RF) power under constant chamber pressure, the relatively smooth surface morphologies of etched Sn-doped GST were obtained. The characteristics of etch rate as functions of gas mixture, chamber pressure, and RF power were also investigated. Besides that, the etching selectivity of Sn-doped GST to SiO2 and photoresist was measured.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Cheng Xu, Bo Liu, Zhitang Song, Songlin Feng, Bomy Chen,