| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674013 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Molecular beam epitaxy of Fe3Si films on GaAs (001) is studied in situ by grazing incidence X-ray diffraction. Fe3Si grows layer-by-layer. During deposition the growth front roughens as indicated by the damping of the X-ray oscillations and corresponding atomic force micrographs. The X-ray oscillations are modified during growth at substrate temperatures of 180 °C and below.
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Authors
B. Jenichen, V.M. Kaganer, W. Braun, J. Herfort, R. Shayduk, K.H. Ploog,