| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674023 | Thin Solid Films | 2007 | 4 Pages |
Abstract
An X-ray reflectivity study of the silicon isobutane interface is presented. Thin isobutane films were adsorbed on a silicon wafer and their film thickness was measured as a function of pressure in order to determine the effective Hamaker constant which is a proportion of the coupling between substrate and adsorbed film. A comparison with theoretical expressions of the effective Hamaker constant is given.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Kaveh Shokuie, Michael Paulus, Christian Sternemann, Robert Fendt, Metin Tolan,