Article ID Journal Published Year Pages File Type
1674065 Thin Solid Films 2008 4 Pages PDF
Abstract
Polarization fatigue mechanism in organic ferroelectrics, structures at interface between ferroelectric vinylidene fluoride oligomer and Al electrode under the repeated polarization switching process were investigated by high-resolution X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR). Al2O3 layer at interface was formed with increasing the number of polarization reversal. The formation of oxide layer will be strongly related to polarization reversal, thus the repeated charge and discharge process by polarization reversal may promote the oxidation of Al electrode. Furthermore, the structural and orientation changes in ferroelectric molecular films by applying the electric field were observed. The formation of Al2O3 layer, as well as the structural changes in thin films, is affected to polarization fatigue process of ferroelectric organic devices.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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