Organic heterojunction ambipolar field effect transistors with asymmetric source and drain electrodes

Ambipolar organic field effect transistors with heterojunction structures have been fabricated using a biphenyl-capped thiophene oligomer (BP2T) and a naphthalene derivative (GS1b) for p-type and n-type organic semiconductors, respectively. Asymmetric electrode structures with Au source and Al–Li drain resulted in better performances than that of a symmetric device due to improved electron injection by the low work-function drain metal.