| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674130 | Thin Solid Films | 2008 | 5 Pages |
Abstract
We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yutaka Noguchi, Rieko Ueda, Tohru Kubota, Toshiya Kamikado, Shiyoshi Yokoyama, Takashi Nagase,