Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674200 | Thin Solid Films | 2007 | 4 Pages |
Abstract
TaSi2 nanowires have been synthesized on Si substrate by annealing FeSi2 thin film and NiSi2 films at 950 °C in an ambient containing Ta vapor whose length would be grown up to 13 μm. The metallic TaSi2 nanowires exhibit excellent electrical properties with remarkable high failure current density of 3 × 108 A cm− 2. In addition, the growth mechanism is addressed in detail, The TaSi2 nanowires are formed in three steps: segregation of Si atoms from the FeSi2 thin film and NiSi2 films underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Li-Jen Chou, Yu-Lun Chueh, Mong-Tzong Ko,