| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674218 | Thin Solid Films | 2007 | 5 Pages |
Abstract
The adsorption studies of magnesium on Si(111) substrate have been performed using AES, LEED and EELS at various substrate temperatures. It is observed that the sticking coefficient of magnesium on the silicide surface is close to zero for temperatures greater than 100 °C. It has been shown that the magnesium silicide grows as continuous films on Si substrate at temperature 100-140 °C, while for temperatures higher than 170 °C the magnesium silicide grows in the form of islands.
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Authors
K.N. Galkin, Mahesh Kumar, Govind Govind, S.M. Shivaprasad, V.V. Korobtsov, N.G. Galkin,